- Home
- Search Results
- Page 1 of 1
Search for: All records
-
Total Resources3
- Resource Type
-
0000000003000000
- More
- Availability
-
30
- Author / Contributor
- Filter by Author / Creator
-
-
Yu, Zhongyuan (3)
-
Anopchenko, Aleksei (2)
-
Tao, Long (2)
-
Yang, Jingyi (2)
-
Zhang, Jinqiannan (2)
-
Er, Dequan (1)
-
Lee, Ho Wai (1)
-
Lee, Ho Wai Howard (1)
-
Liu, Yumin (1)
-
Liu, Zheng (1)
-
Lou, Jun (1)
-
Lowengrub, John (1)
-
Price, Christopher C. (1)
-
Schell, Michael (1)
-
Shell, Michael (1)
-
Shenoy, Vivek B. (1)
-
Ye, Han (1)
-
Zhou, Jiadong (1)
-
#Tyler Phillips, Kenneth E. (0)
-
#Willis, Ciara (0)
-
- Filter by Editor
-
-
& Spizer, S. M. (0)
-
& . Spizer, S. (0)
-
& Ahn, J. (0)
-
& Bateiha, S. (0)
-
& Bosch, N. (0)
-
& Brennan K. (0)
-
& Brennan, K. (0)
-
& Chen, B. (0)
-
& Chen, Bodong (0)
-
& Drown, S. (0)
-
& Ferretti, F. (0)
-
& Higgins, A. (0)
-
& J. Peters (0)
-
& Kali, Y. (0)
-
& Ruiz-Arias, P.M. (0)
-
& S. Spitzer (0)
-
& Sahin. I. (0)
-
& Spitzer, S. (0)
-
& Spitzer, S.M. (0)
-
(submitted - in Review for IEEE ICASSP-2024) (0)
-
-
Have feedback or suggestions for a way to improve these results?
!
Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
A gate-tunable plasmonic optical filter incorporating a sub- wavelength patterned metal–insulator–metal metasurface heterostructure is proposed. An additional thin transparent conducting oxide (TCO) layer is embedded in the insulator layer to form a double metal–oxide-semiconductor configu- ration. Heavily n-doped indium tin oxide (ITO) is em- ployed as the TCO material, whose optical property can be electrically tuned by the formation of a thin active ep- silon-near-zero layer at the ITO–oxide interfaces. Full-wave electromagnetic simulations show that amplitude modula- tion and shift of transmission peak are achievable with 3–5 V applied bias, depending on the application. Moreover, the modulation strength and transmission peak shift increase with a thinner ITO layer. This work is an essential step toward a realization of next-generation compact photonic/ plasmonic integrated devices.more » « less
-
Zhang, Jinqiannan; Yang, Jingyi; Schell, Michael; Anopchenko, Aleksei; Tao, Long; Yu, Zhongyuan; Lee, Ho Wai Howard (, Optics Letters)
-
Ye, Han; Zhou, Jiadong; Er, Dequan; Price, Christopher C.; Yu, Zhongyuan; Liu, Yumin; Lowengrub, John; Lou, Jun; Liu, Zheng; Shenoy, Vivek B. (, ACS Nano)
An official website of the United States government

Full Text Available